Part Number | IRF6607TR1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Xilinx |
Description | MOSFET N-CH 30V 27A DIRECTFET |
Series | HEXFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 27A (Ta), 94A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 75nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 6930pF @ 15V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 3.6W (Ta), 42W (Tc) |
Rds On (Max) @ Id, Vgs | 3.3 mOhm @ 25A, 10V |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DIRECTFET,MT |
Package / Case | DirectFET,Isometric MT |
Image |
IRF6607TR1
XILIINX
10000
0.09
Hong Kong Capital Industrial Co.,Ltd
IRF6607TR1
XILINX/
4200
0.855
Bonase Electronics (HK) Co., Limited
IRF6607TR1
XILINXI
6000
1.62
Dynamic Tronics Ltd
IRF6607TR1
XILINX
15000
2.385
Riking Technology (HK) Co., Limited
IRF6607TR1
Xilinx Inc.
23683
3.15
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED