Description
: HKIN - Datasheet (Result Page) 8 (0.26 ) (5) Low-Power DDR3 DRAM Memory Validation Results Low-Power DDR3 DRAM Memory Validation Results May 27, 2014 1337. Samsung. K4E6E304ED-EGCF. 16Gb. 4Gb. QDP x32. D. 1334. Samsung. K4E6E304EE - EGCE . 16Gb. 4Gb. QDP x32. E. 1407. SK Hynix. Google - 7/2017 5th Generation Intel Core Processor Family LP3 Family Memory 5th Generation Intel Core Processor Family LP3 Family Memory K4E8E304EE-EGCE. 8Gb. 4Gb. DDP x32. E. 1407. Samsung. K4E6E304EE - EGCE . 16Gb. 4Gb. QDP x32. E. 1407. SK Hynix. H9CCNNN8GTMLAR-NTD. 8Gb . Google - 7/2017 PRODUCT SELECTION GUIDE PRODUCT SELECTION GUIDE K4E6E304EE - EGCE . 178-FBGA, 11x11.5, QDP, 1600Mbps. 1.8V/1.2V/1.2V. Now . 1CH x 32. K4E6E304EE-AGCE. 168-FBGA, 12x12, QDP, 1600Mbps. Google - 7/2017 178-Ball, Single-Channel Mobile LPDDR3 SDRAM 178-Ball, Single-Channel Mobile LPDDR3 SDRAM Page 1. Mobile LPDDR3 SDRAM. EDF8132A1MC, EDFA232A1MA. Features. Ultra-low-voltage core and I/O power supplies. Frequency range. Google - 7/2017 Samsung Mobile DRAM Samsung Mobile DRAM Page 1. BROCHURE. Samsung Mobile DRAM. High-speed, power-saving memory in a slim profile supports the next generation of mobile devices. Google - 7/2017 1 2 : HKIPortal_resize(); HKIPortal_attachEvent(window, load, HKIPortal_resize); HKIPortal_attachEvent(window, load, HKIPortal_onLoad); reviews - - cal - Price range: Availability: . Price: . - - = tn.height * 7 / 5 data-attr={src:tn.src}>
Part Number | K4E6E304EEEGCE |
Brand | Xilinx |
Image |
K4E6E304EE-EGCE
XILIINX
66129
1.84
Yuda Electronic Hongkong Limited
K4E6E304EE-EGCE
XILINX/
30000
3.1125
HONGKONG LIANZHENG TRADE CO., LIMITED
K4E6E304EE-EGCE
XILINXI
6000
4.385
Riking Technology (HK) Co., Limited
K4E6E304EE-EGCE
XILINX
62670
5.6575
Innovation Best Electronics Technology Limited
K4E6E304EE-EGCE
Xilinx Inc.
11001
6.93
CIS Ltd (CHECK IC SOLUTION LIMITED)