Part Number | STGW30M65DF2 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - IGBTs - Single |
Brand | Xilinx |
Description | TRENCH GATE FIELD-STOP IGBT M SE |
Series | - |
Packaging | Tube |
IGBT Type | Trench Field Stop |
Voltage - Collector Emitter Breakdown (Max) | 650V |
Current - Collector (Ic) (Max) | 60A |
Current - Collector Pulsed (Icm) | 120A |
Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 30A |
Power - Max | 258W |
Switching Energy | 300µJ (on), 960µJ (off) |
Input Type | Standard |
Gate Charge | 80nC |
Td (on/off) @ 25°C | 31.6ns/115ns |
Test Condition | 400V, 30A, 10 Ohm, 15V |
Reverse Recovery Time (trr) | 140ns |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Supplier Device Package | TO-247 |
Image |
STGW30M65DF2
XILIINX
20000
1.56
HK XINYI COMPONENTS ASIA CO., LIMITED
STGW30M65DF2
XILINX/
220360
2.6875
Cinty Int'l (HK) Industry Co., Limited
STGW30M65DF2
XILINXI
1000
3.815
STH Electronics Co.,Ltd
STGW30M65DF2
XILINX
1200
4.9425
RX ELECTRONICS LIMITED
STGW30M65DF2
Xilinx Inc.
24934
6.07
NEW IDEAS INDUSTRIAL CO., LIMITED